Bio

Contact Information:

UIC Dept. of Electrical & Computer Engineering, 1020 Sciences and Engineering Offices (SEO), 851 South Morgan St.(M/C 154)
Chicago, IL 60607

Office: 3017 ERF

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Ph.D. Electrical Engineering
University of California, Riverside, 2009

M.Sc. Physics
Nanjing University, 2004

B.Sc. Physics
Nanjing University, 2001

ECE225 Circuit Analysis (Summer  2013, Summer 2016)

ECE340 Electronics I (Spring 2015)

ECE440 Nanoelectronics (Fall 2013, Spring 2014, Fall 2014, Fall 2015)

ECE491 Introduction to Nanotechnology (Fall 2011, Fall 2012)

ECE541/ME541 Microelectronic Fabrication Techniques (Spring 2012, Spring 2015, Spring 2016)

ECE542 Advanced Semiconductor Devices (Spring 2013)

Electronic materials (esp. semiconductors) and devices towards functional applications in nanoelectronics, optoelectronics, spintronics, and energy harvesting

  1. Z. Yang* and S. Ramanathan, Breakthrough in Photonics 2014: Phase change materials for photonics (Invited paper), IEEE Photonics Journal 7, 0700305 (2015).[PDF (6 pages)]
  2. Z. Yang*A perspective of recent progress in ZnO diluted magnetic semiconductors (Invited paper)Applied Physics A 112, 241 (2013).  [PDF (14 pages)] 
  3. M. A. Kats, R. Blanchard, P. Genevet, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso*, Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material, Optics Letters 38, 368 (2013). [PDF (3 pages)]
  4. Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan*, Voltage-triggered ultra-fast phase transition in vanadium dioxide switchesIEEE Electron Device Letters 34, 220 (2013).  [PDF (3 pages)]  
  5. M. A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso*, Ultra-thin perfect absorber employing a tunable phase change material, Applied Physics Letters 101, 221101 (2012).  [PDF (5 pages) & Supplementary Materials PDF (4 pages)]
  6. Z. Yang*, Y. Zhou, and S. Ramanathan, Studies on room temperature electric field effect in ionic-liquid gated VO2 three-terminal devices, Journal of Applied Physics 111, 014506 (2012).  [PDF (5 pages)]
  7. Y. Zhou, Z. Yang, and S. Ramanathan*, Multi-resistance states through electrically driven phase transitions in VO2/HfO2/VO2 heterostructures on siliconIEEE Electron Device Letters 33, 101 (2012).  [PDF (3 pages)]
  8. C. Ko, Z. Yang, and S. Ramanathan, Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry, ACS Applied Materials & Interfaces 3, 3396 (2011).  [PDF (6 pages)]
  9. Z. Yang*, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77K and 300K, Journal of Applied Physics 110, 033725 (2011). [PDF (5 pages)]
  10. Z. Yang, C. Ko, and S. Ramanathan, Oxide electronics utilizing ultra-fast metal-insulator transitions (Invited paper), Annual Review of Materials Research 41, 337 (2011).  [PDF (31 pages)]
  11. Z. Yang, Y. Li, D. C. Look, H. M. Zhou, W. V. Chen, R. K. Kawakami, P. K. L. Yu, and J. L. Liu, Thermal annealing effect on spin coherence in ZnO single crystals, Journal of Applied Physics 110, 016101 (2011). [PDF (3 pages) & Supplementary materials PDF (8 pages)]