Zheng Yang Homepage > Publications
Overview and
Highlights
v >60 peer-reviewed
papers (including 51 SCI-Index-collected papers), >40 conference
presentations.
v ISI-Web-of-Knowledge citation statistics: 51 papers, >1100 times cited, and H-index of 18
till the end of 2012.
v Google Scholar
citation statistics: 64 papers, >1350 times cited, H-index of 19, and
i10-index of 28 till the end of 2012.
Peer-Reviewed
Papers
2013(x papers)
2012(3 papers)
64 Ultra-thin perfect absorber employing a
tunable phase change material (5 pages) (PDF) (Featured
on APL Journal Cover Link)
(Media Press: Science Daily, Physics Today, Discovery, Harvard Crimson, Vision Systems, Ceramic Tech, Spectral, etc)
M.
A. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M.
M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso
Applied Physics Letters 101, 221101 (2012)
63 Studies on room temperature electric field
effect in ionic-liquid gated VO2 three-terminal devices (5 pages) (PDF)
Z.
Yang*, Y. Zhou, and S. Ramanathan
Journal of Applied Physics 111, 014506 (2012)
62 Multi-resistance
states through electrically driven phase transitions in VO2/HfO2/VO2
heterostructures on silicon (3 pages) (PDF)
Y. Zhou, Z.
Yang, and S. Ramanathan
IEEE Electron Device Letters 33, 101 (2012)
2011(10 papers)
61 Work function of vanadium dioxide thin films
across the metal-insulator transition and the role of surface nonstoichiometry
(6 pages) (PDF)
C.
Ko, Z. Yang, and S. Ramanathan
ACS Applied Materials & Interfaces 3, 3396
(2011)
60 Vanadium
dioxide (VO2) is also a ferroelectric: Properties from memory
structures (5 pages) (PDF)
S. H. Lee, M. Kim, J. W. Lee, Z. Yang, S. Ramanathan, and
S. Tiwari
IEEE Conference
Proceedings#, 2011-IEEE-NANO, 735 (2011) {DOI: 10.1109/NANO.2011.6144602}
59 Studies on electric triggering of the
metal-insulator transition in VO2 thin films between 77K and 300K (5
pages) (PDF)
Z.
Yang*, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan
Journal of Applied Physics 110, 033725 (2011)
58 Oxide electronics utilizing ultra-fast
metal-insulator transitions (31 pages) (PDF) (Invited
review)
Z. Yang, C. Ko, and S. Ramanathan
Annual Review of Materials Research 41,
337 (2011)
57 Thermal annealing effect on spin coherence
in ZnO single crystals (3 pages + 8 pages of supporting materials) (PDF) (Supporting
Materials)
Z.
Yang, Y. Li, D. C. Look, H. M. Zhou, W. V. Chen, R. K. Kawakami, P. K.
L. Yu, and J. L. Liu
Journal of Applied Physics
(Communications) 110, 016101 (2011)
56 Correlated oxide phase transition switch: A
paradigm in electron devices (2 pages)
(PDF)
Z.
Yang, C. Ko, V. Balakrishnan, and S. Ramanathan
IEEE Conference Digest#, DRC, 187 (2011) {DOI:
10.1109/DRC.2011.5994481}
55 Direct measurement of
compositional complexity-induced electronic inhomogeneity in VO2
thin films grown on gate dielectrics (3 pages) (PDF)
Z. Yang* and S. Ramanathan
Applied
Physics Letters
98, 192113
(2011)
54 TiSi2 nanocrystal metal oxide
semiconductor field effect transistor memory (7 pages) (PDF)
H.
Zhou, B. Li, Z. Yang, N. Zhan, D. Yan, R. K. Lake, and J. L. Liu
IEEE Transactions on Nanotechnology 10,
499 (2011)
53 Geometric confinement effects on the
metal-insulator transition temperature and stress relaxation in VO2
thin films grown on silicon (7 pages) (PDF)
B.
Viswanath, C. Ko, Z. Yang, and S. Ramanathan
Journal of Applied Physics 109, 063512 (2011)
52 Epitaxial Mn-doped ZnO diluted magnetic
semiconductor thin films grown by plasma-assisted molecular-beam epitaxy (7
pages) (PDF)
Z.
Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu
Journal of Crystal Growth 314,
97 (2011)
2010 (9 papers)
51 Dielectric and carrier transport properties
of vanadium dioxide thin films across the phase transition utilizing gated
capacitor devices (8 pages) (PDF)
Z. Yang*, C. Ko, V. Balakrishnan, G. Gopalakrishnan, and S. Ramanathan
Physical Review B 82, 205101 (2010)
50 Metal-insulator
transition characteristics of VO2 thin films grown on Ge (100)
single crystals (6 pages) (PDF)
Z. Yang*, C. Ko, and S. Ramanathan
Journal of Applied Physics 108, 073708 (2010)
49 Homobuffer
thickness effect on the background electron carrier concentration of epitaxial
ZnO thin films (3 pages) (PDF)
Z.
Yang, H. M. Zhou, W. V. Chen, L.
Li, J. Z. Zhao, P. K. L. Yu, and J. L. Liu
Journal of Applied Physics
(Communications) 108, 066101 (2010)
48 Study of
rapid thermal annealing effect on CdZnO thin films grown on Si substrate (4
pages) (PDF)
L. Li, Z. Yang, Z. Zuo, J. Y. Kong,
and J. L. Liu
Journal of Vacuum Science and
Technology B 28, C3D13 (2010)
47 Ultraviolet
light emissions in MgZnO/ZnO double heterojunction diodes by molecular beam
epitaxy (3 pages) (PDF)
J. Kong, L. Li, Z. Yang, and J. Liu
Journal of Vacuum Science and
Technology B 28, C3D10 (2010)
46 Donor-acceptor-pair
photoluminescence in Ga-doped ZnO thin films grown by plasma-assisted molecular
beam epitaxy (4 pages) (PDF)
Z. Yang and J. L. Liu
Journal of Vacuum Science and Technology B 28, C3D6 (2010)
45 Thermal
stability of CdZnO thin films grown by molecular-beam epitaxy (4 pages) (PDF)
L. Li, Z. Yang, Z. Zuo, J. H. Lim, J.
L. Liu
Applied Surface Science 256, 4734 (2010)
44 ZnO:Sb/ZnO:Ga
light emitting diode on c-plane sapphire by molecular beam epitaxy (3
pages) (PDF)
Z. Yang, S. Chu, W. V. Chen, L. Li, J. Kong, J. Ren, P. K.
L. Yu, J. Liu
Applied Physics Express 3, 032101 (2010)
43 Na-doped p-type ZnO microwires (2 pages + 6
pages of supporting materials) (PDF)
(Supporting Materials)
W. Liu, F. Xiu, K.
Sun, Y. H. Xie, K. L. Wang, Y. Wang, J. Zou, Z. Yang, and J. L.
Liu
Journal
of the American Chemical Society (Communication) 132, 2498 (2010)
2009 (5 papers)
42 Cyan
electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes (5 pages) (PDF)
L. Li, Z. Yang, and J. L. Liu
Mater. Res. Soc. Symp. Proc.# 1201,
1201-H01-09 (2010) {DOI:
10.1557/PROC-1201-H01-09}
41 Temperature dependent
photoluminescence of CdZnO thin films grown by molecular-beam epitaxy (5 pages) (PDF)
Z. Yang, L. Li, Z. Zuo, and
J. L. Liu
Journal
of Crystal Growth
312, 68
(2009)
40 Blue
electroluminescence from ZnO based heterojunction diodes with CdZnO active
layers (3 pages) (PDF)
L. Li, Z. Yang, J. Y. Kong, and
J. L. Liu
Applied
Physics Letters
95, 232117
(2009)
39 Microstructure and
transport properties of ZnO:Mn diluted magnetic semiconductor thin films (6
pages) (PDF)
Z. Yang, W. P. Beyermann, M.
B. Katz, O. K. Ezekoye, Z. Zuo, Y. Pu, J. Shi, X. Q. Pan, and J. L. Liu
Journal
of Applied Physics
105, 053708
(2009)
38 Ga-related
photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam
epitaxy (3 pages) (PDF)
Z. Yang, D. C. Look, and J.
L. Liu
Applied
Physics Letters
94, 072101
(2009)
2008 (7 papers)
37 Study of the effect
of plasma power on ZnO thin films growth using electron cyclotron resonance
plasma-assisted molecular-beam epitaxy (6 pages) (PDF)
Z. Yang, J. H. Lim, S. Chu,
Z. Zuo, and J. L. Liu
Applied
Surface Science
255, 3375
(2008)
36 Electron carrier
concentration dependent magnetization and transport properties in ZnO:Co diluted
magnetic semiconductor thin films (7 pages) (PDF)
Z. Yang, M. Biasini, W. P.
Beyermann, M. B. Katz, O. K. Ezekoye, X. Q. Pan, Y. Pu, J. Shi, Z. Zuo, and J.
L. Liu
Journal
of Applied Physics
104, 113712
(2008)
35 Electrically pumped
ultraviolet ZnO diode lasers on Si (3 pages) (PDF) (Media Press: Laser Focus World )
S. Chu, M. Olmedo, Z. Yang, J. Y. Kong, and
J. L. Liu
Applied
Physics Letters
93, 181106
(2008)
34 Dominant ultraviolet
light emissions in packed ZnO columnar homojunction diodes (3 pages) (PDF)
J. Y. Kong, S. Chu, M. Olmedo, L. Li, Z.
Yang, and J. L. Liu
Applied
Physics Letters
93, 132113
(2008)
33 Sb-doped p-ZnO/Ga-doped
n-ZnO homojunction ultraviolet light emitting diodes (3 pages) (PDF)
S. Chu, J. H. Lim, L. J. Mandalapu, Z.
Yang, L. Li, and J. L. Liu
Applied
Physics Letters 92, 152103 (2008)
32 Ultraviolet emission
from Sb-doped p-type ZnO based heterojunction light-emitting diodes (3 pages) (PDF)
L. J. Mandalapu, Z. Yang, S.
Chu, and J. L. Liu
Applied
Physics Letters 92, 122101 (2008)
31 Electron concentration dependent magnetization and magnetic anisotropy
in ZnO:Mn thin films (3 pages) (PDF)
Z. Yang, J. L. Liu, M.
Biasini, and W. P. Beyermann
Applied
Physics Letters 92, 042111 (2008)
2007 (5 papers)
30 Electron carrier
concentration dependent magnetization in ZnO:Co and ZnO:Mn thin films (6 pages) (PDF)
Z. Yang*, M. Biasini, L. J.
Mandalapu, Z. Zuo, W. P. Beyermann, and J. L. Liu
Mater. Res. Soc. Symp. Proc.# 1035,
1035-L06-06 (2008) {DOI:10.1557/PROC-1035-L06-06}
29 Influence of electron injection on the temporal response of ZnO
homojunction diodes (3 pages) (PDF)
O. L. Tirpak, G. Nootz, E. Flitsiyan, L.
Chernyak, L. J. Mandalapu, Z. Yang, J. L. Liu, K. Gartsman, and
A. Osinsky
Applied
Physics Letters 91, 042115 (2007)
28 Al/Ti contacts to Sb-doped p-type ZnO (5 pages) (PDF)
L. J. Mandalapu, F. X. Xiu, Z. Yang,
and J. L. Liu
Journal
of Applied Physics 102, 023716 (2007)
27 Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown
by molecular-beam epitaxy (4 pages) (PDF)
L. J. Mandalapu, F. X. Xiu, Z. Yang,
and J. L. Liu
Solid-State
Electronics 51, 1014 (2007)
26 Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO (3 pages) (PDF)
L. J. Mandalapu, Z. Yang, and
J. L. Liu
Applied
Physics Letters 90, 252103 (2007)
2006 (11 papers)
25 Influence of electron injection on the photoresponse of ZnO homojunction
diodes (3
pages) (PDF)
O. L. Tirpak, L. Chernyak, L. J. Mandalapu, Z.
Yang, J. L. Liu, K. Gartsman, Y. Feldman, and Z. Dashevsky
Applied
Physics Letters 89, 142114 (2006)
24 Bi-induced acceptor states in ZnO by molecular-beam epitaxy (3 pages) (PDF)
F. X. Xiu, L. J. Mandalapu, Z. Yang,
J. L. Liu, G. F. Liu, and J. A. Yarmoff
Applied
Physics Letters 89, 052103 (2006)
23 ZnO growth on Si
with low-temperature CdO and ZnO buffer layers by molecular beam epitaxy (4
pages) (PDF)
X. F. Xiu, Z. Yang,
D. T. Zhao,
J. L. Liu, K. A. Alim, A. A. Balandin, M. E. Itkis, and R. C. Haddon
Journal of Electronic Materials 35, 691 (2006)
22 Donor and acceptor competitions in phosphorus-doped ZnO (3 pages) (PDF)
F. X. Xiu, Z. Yang, L. J.
Mandalapu, and J. L. Liu
Applied
Physics Letters 88, 152116 (2006)
21 Folded acoustic phonon modes in Ge/Si quantum dot superlattices with
different periods (6 pages) (PDF)
Z. Yang*, J. L. Liu, Y. Shi,
Y. D. Zheng, and K. L. Wang
Journal
of Nanoelectronics
and Optoelectronics 1, 89 (2006)
20 p-type behavior from Sb-doped ZnO heterojunction photodiodes (3 pages) (PDF)
L. J. Mandalapu, F. X. Xiu, Z. Yang,
D. T. Zhao, and J. L. Liu
Applied
Physics Letters 88, 112108 (2006)
19 Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet
detection (3
pages) (PDF)
L. J. Mandalapu, Z. Yang, F. X.
Xiu, D. T. Zhao, and J. L. Liu
Applied
Physics Letters 88, 092103 (2006)
18 p-type ZnO films with solid-source phosphorus doping by
molecular-beam epitaxy (3 pages) (PDF)
F. X. Xiu, Z. Yang, L. J.
Mandalapu, J. L. Liu, and W. P. Beyermann
Applied Physics
Letters 88, 052106 (2006)
17 Sb surfactant-mediated SiGe graded layers for Ge photodiodes integrated
on Si (8
pages) (PDF)
J. L. Liu, Z. Yang, and K. L.
Wang
Journal of
Applied Physics
99, 024504 (2006)
16 ZnO growth on Si with
low-temperature ZnO buffer layers by ECR-assisted MBE (5 pages) (PDF)
F. X. Xiu, Z. Yang, D. T. Zhao,
J. L. Liu, K. A. Alim, A. A. Balandin, M. E. Itkis, and R. C. Haddon
Journal of Crystal Growth 286, 61 (2006)
15 P-type ZnO by Sb
doping for PN-junction photodetectors (7 pages) (PDF)
J. L. Liu, F. X. Xiu, L. J. Mandalapu, and Z.
Yang
Proceedings of SPIE# 6122, 61220H
(2006) {DOI: 10.1117/12.649571}
2005 (4 papers)
14 Characteristics of a
phosphorus-doped p-type ZnO film by MBE (6 pages) (PDF)
F. X. Xiu, Z. Yang, L. J.
Mandalapu, and J. L. Liu
Mater. Res. Soc. Symp. Proc.# 892,
0892-FF18-09-EE09-09 (2006) {DOI:10.1557/PROC-0892-FF18-09-EE09-09}
13 UV photoconductors
based on Ga-doped ZnO films (6 pages) (PDF)
L. J. Mandalapu, F. X. Xiu, Z. Yang,
and J. L. Liu
Mater. Res. Soc. Symp. Proc.# 891,
0891-EE08-07 (2006) {DOI:10.1557/PROC-0891-EE08-07}
12 Photoluminescence study
of Sb-doped p-type ZnO films by molecular-beam epitaxy (3 pages) (PDF)
F. X. Xiu, Z. Yang, L. J.
Mandalapu, D. T. Zhao, and J. L. Liu
Applied
Physics Letters 87, 252102 (2005)
11 High-mobility Sb-doped p-type
ZnO by molecular-beam epitaxy (3 pages) (PDF)
F. X. Xiu, Z. Yang, L. J.
Mandalapu, D. T. Zhao, J. L. Liu, and W. P. Beyermann
Applied
Physics Letters
87, 152101 (2005)
2004 (5 papers)
10 Group theory in
carbon nanotubes and a series of novel point groups (4 pages) (PDF)
Z. Yang*, Y. Shi,
F. Liu, R. Zhang, and Y. D. Zheng
Acta Physica Sinica (in Chinese) 53,
4299 (2004)
9 Circuit
simulation of MOSFET memory based on composite quantum dots (3 pages) (PDF)
J. Lv, Y. Shi, L. Pu, H. G. Yang, Z.
Yang, and Y. D. Zheng
Acta
Electronica Sinica (in Chinese)# 32, 1793
(2004)
8 A novel approach to evaluate the carrier effective mass in
GeSi quantum dot structure (3 pages) (PDF)
Z. Yang*, Y. Shi, J. L. Liu,
B. Yan, R. Zhang, Y. D. Zheng, and K. L. Wang
IEEE Conference Proceedings#, ICSICT-2004
Vol. 2, 913~915 (2005). {DOI:
10.1109/ICSICT.2004.1436655}
7 Structural
characteristics of self-assembled Ge/Si quantum dot superlattices (4 pages) (PDF)
B. Yan, Z. Yang, Y. Shi, J. L.
Liu, R. Zhang, Y. D. Zheng, and K. L. Wang
IEEE Conference Proceedings#, SIMC-XIII-2004,
139~142 (2004). {DOI:
10.1109/SIM.2005.1511403}
6. Optical
properties of Ge/Si quantum dot superlattices (4 pages) (PDF)
Z. Yang*, Y. Shi, J. L. Liu,
B. Yan, R. Zhang, Y. D. Zheng, and K. L. Wang
Materials
Letters
58, 3765 (2004)
2003 (2 papers)
5. Strain and phonon
confinement in self-assembled Ge quantum dot superlattices (3 pages) (PDF)
Z. Yang*, Y. Shi,
J. L. Liu, B. Yan, Z. X. Huang, Y. D. Zheng, and K. L. Wang
Chinese
Physics Letters 20, 2001 (2003)
4. Frequently
used progression and integrals in statistical physics (4 pages) (PDF)
Z. Yang*
College
Physics (in Chinese)# 22, 25 (2003)
2002 (3 papers)
3. Microstructural
models of alumina nanotubes and anodic porous alumina film formed in sulphuric
acid (4 pages) (PDF)
L. Pu, Z. Q. Chen, C. Tan, Z. Yang,
J. P. Zou, X. M. Bao, D. Feng, Y. Shi, and Y. D. Zheng
Chinese
Physics Letters 19, 391 (2002)
2. Carbon
nanotube-based electronics (5 pages) (PDF)
Z. Yang*, Y. Shi,
S. L. Gu, B. Shen, R. Zhang, and Y. D. Zheng
Physics (in
Chinese)#
31, 624 (2002)
1. Carbon
nanotube-based electronic devices (6 pages) (PDF)
Z. Yang*, Y. Shi, S. L. Gu, B.
Shen, R. Zhang, and Y. D. Zheng
Research
& Progress of Solid State Electronics (in Chinese)# 22, 131 (2002)
(Note:
As the corresponding author when marked with *; non-SCI-Index-collected
journals when marked with #,
i.e. journals not collected by ISI-Web-of-Knowledge
database. All PDF files are copyrighted
works of the publishers.)
Conference
Presentations
C44 Probing
compositional disorder in correlated oxides through variable temperature
capacitance spectroscopy and correlation with metal-insulator transition
characteristics (poster)
C.
Ko, Y. Zhou, Z. Yang, and S.
Ramanathan
MRS 2011 Fall Meeting, Boston, Massachusetts, USA
(November 28-December 2, 2011)
C43 Vanadium
dioxide (VO2) is also a ferroelectric: properties from memory
structures (oral)
S. H. Lee, M. Kim, J. W. Lee, Z. Yang, S. Ramanathan, and S.
Tiwari
IEEE 11th International
Conference on Nanotechnology, Portland, Oregon, USA (August 15-19, 2011)
C42 Correlated oxide phase transition switch: a
paradigm in electron devices (oral) (invited talk)
Z. Yang, C. Ko, V. Balakrishnan, and S. Ramanathan
Device
Research Conference, University of California, Santa Barbara, Santa Barbara,
California, USA (June 20-22, 2011)
C41 Room
temperature reconfigurable electronics with ultra-fast metal-insulator
transition in vanadium dioxide (oral)
Z.
Yang and S. Ramanathan
MRS 2011 Spring Meeting, San Francisco, California, USA
(April 25-29, 2011)
C40 Solid-state
thermally tunable capacitor utilizing correlated oxide metal-insulator
transitions (oral)
Z.
Yang, C. Ko, and S. Ramanathan
MRS 2010 Fall Meeting, Boston, Massachusetts, USA
(November 29-December 3, 2010)
C39 Tunable
work function in vanadium dioxide thin films by proximity to metal-insulator
transition (oral)
C. Ko, Z. Yang, and S. Ramanathan
MRS 2010 Fall Meeting, Boston, Massachusetts, USA
(November 29-December 3, 2010)
C38 Metal
insulator transition-induced stress changes in vanadium dioxide thin films for
MEMS devices (oral)
V. Balakrishnan, C. Ko, Z. Yang, and S. Ramanathan
MRS 2010 Fall Meeting, Boston, Massachusetts, USA
(November 29-December 3, 2010)
C37 ZnO heterojunction light-emitting diodes with CdZnO layers (oral)
J. L. Liu, L. Li, and Z. Yang
The
6th International Workshop on Zinc Oxide and Related Materials,
Changchun, China (August 5-7, 2010)
C36 Progress
in ZnO-based light emitting diodes (oral) (invited talk)
J. L. Liu, J. Y. Kong, L. Li, S. Chu,
and Z. Yang
The 8th International Symposium
on Semiconductor Light Emitting Devices, Peking University, Beijing, China (May
16-21, 2010)
C35 Cyan electroluminescence from
n-ZnO/i-CdZnO/p-Si heterojunction diodes (oral)
L. Li, Z. Yang, and J. L. Liu
MRS 2009 Fall Meeting, Boston, Massachusetts, USA
(November 30-December 4, 2009)
C34 Photoluminescence
in Ga-doped ZnO thin films grown by plasma-assisted molecular-beam epitaxy
(poster)
Z. Yang and J. L. Liu
The 26th
North American Conference on Molecular Beam Epitaxy (NAMBE), Princeton
University, Princeton, New Jersey, USA (August 9~12, 2009)
C33 Dominant ultraviolet light emissions
in ZnO homojunction and double heterojunction diodes by molecular-beam epitaxy (poster)
J. Y. Kong, L. Li, Z.
Yang, and J. L. Liu
The 26th
North American Conference on Molecular Beam Epitaxy (NAMBE), Princeton
University, Princeton, New Jersey, USA (August 9~12, 2009)
C32 Thermal
stability of CdZnO thin films grown by molecular-beam epitaxy (poster)
L. Li, Z. Yang,
Z. Zuo, J. Y. Kong, and J. L. Liu
The 26th
North American Conference on Molecular Beam Epitaxy (NAMBE), Princeton
University, Princeton, New Jersey, USA (August 9~12, 2009)
C31 Co-
and Mn-doped ZnO diluted magnetic semiconductors grown by molecular beam
epitaxy (poster)
Z. Zuo, Z. Yang,
and J. L. Liu
The 26th
North American Conference on Molecular Beam Epitaxy (NAMBE), Princeton University,
Princeton, New Jersey, USA (August 9~12, 2009)
C30 Photoluminescence
properties of CdZnO thin films grown by molecular-beam epitaxy (oral)
Z. Yang,
L. Li, J. Y. Kong, Z. Zuo, and J. L. Liu
APS
2009 March Meeting,
Pittsburgh, Pennsylvania, USA (March 16-20, 2009)
C29 Ultraviolet
ZnO light emitting diodes and quantum well laser diodes (oral) (invited talk)
J. L. Liu, S. Chu, J. Y. Kong, L. Li, and Z. Yang
SPIE 2009 Photonics
West, San Jose, California, USA (January 24~29, 2009)
C28 Ultraviolet ZnO light-emitting diodes and laser diodes (oral)
J. L. Liu, S. Chu, J. Y. Kong, and Z.
Yang
The
5th International Workshop on Zinc Oxide and Related Materials, Ann
Arbor, Michigan, USA (September 21-24, 2008)
C27 Study
of the effect of plasma power on ZnO thin films growth using
electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (Poster)
Z. Yang,
J. H. Lim, S. Chu, Z. Zuo, and J. L. Liu
The
15th International
Conference on Molecular Beam Epitaxy, University of British Columbia,
Vancouver, British Columbia, Canada (August 3-8, 2008)
C26 Co- and Mn-implanted ZnO (invited talk)
J. L. Liu and Z. Yang
WUN
(Worldwide Universities Network) 2nd International Conference on
Spintronic Materials and Technology (WUN-SPIN-08), Nanjing University, Nanjing,
China (July 14-16, 2008)
C25 Sb-doped p-type ZnO films for
light-emitting diodes (poster)
J.
L. Liu, S. Chu, Z. Yang, J.
Y. Kong, and L. Li
MRS
2008 International Materials
Research Conference, Chongqing, China (June 9-12, 2008)
C24 Study of the anomalous Hall effect,
magnetoresistance, and magnetic anisotropy in ZnO:Co and ZnO:Mn thin films
(oral)
Z.
Yang, Z. Zuo, Y. Pu, M. Biasini, W. P. Beyermann, J. Shi, X. Q. Pan,
and J. L. Liu
APS
2008 March Meeting, New
Orleans, Louisiana, USA (March 10-14, 2008)
C23 Study of the carrier concentration
dependent photoluminescence of Ga-doped ZnO thin films (oral)
Z.
Yang, L. J. Mandalapu, and J. L. Liu
APS
2008 March Meeting, New
Orleans, Louisiana, USA (March 10-14, 2008)
C22 Sb-doped p-type ZnO and its
application for light-emitting devices (oral)
S. Chu,
L. J. Mandalapu, Z.
Yang,
J. H. Lim, Lin Li, and Jianlin Liu
APS
2008 March Meeting, New
Orleans, Louisiana, USA (March 10-14, 2008)
C21 Sb-doped ZnO epitaxial films and
optoelectronic devices (oral) (invited talk)
J.
L. Liu, S. Chu, L. J.
Mandalapu, and Z. Yang
SPIE 2008 Photonics
West, San Jose, California, USA (January 19~24, 2008)
C20 Electron carrier concentration dependent
magnetization in ZnO:Co and ZnO:Mn thin films (oral)
Z. Yang, M. Biasini, L. J.
Mandalapu, Z. Zuo, W. P. Beyermann, and J. L. Liu
MRS
2007 Fall Meeting,
Boston, Massachusetts, USA (November 26-30, 2007)
C19 Photodetection and electroluminescence
from optoelectronic devices based on Sb-doped p-ZnO (oral)
L.
J. Mandalapu, F. X. Xiu, Z. Yang, S. Chu, and J. L. Liu
TMS 49th Electronic
Materials Conference (EMC), University of Notre Dame, Notre Dame, Indiana, USA
(June 20~22, 2007)
C18 Toward reliable p-type ZnO epitaxial
films and devices (oral)
J.
L. Liu, F. X. Xiu, L. J.
Mandalapu, and Z. Yang
SPIE 2007 Photonics
West, San Jose, California, USA (January 20~25, 2007)
C17 Carrier-dependent photoluminescence
study of Ga-doped ZnO thin films (poster)
Z.
Yang, L. J. Mandalapu, F.
X. Xiu, J. L. Liu
MRS
2006 Fall Meeting,
Boston, Massachusetts, USA (November 27~December 1, 2006)
C16 Photodetectors based on Ti/Al contacts
on Sb-doped p-ZnO/n-Si (poster)
L. J. Mandalapu, F. X. Xiu, Z.
Yang, and J. L. Liu
MRS
2006 Fall Meeting,
Boston, Massachusetts, USA (November 27~December 1, 2006)
C15 Bi-doped ZnO films grown by
molecular-beam epitaxy (oral)
F. X. Xiu, L. J. Mandalapu, Z.
Yang, and J. L. Liu
TMS 48th Electronic Materials Conference (EMC), Pennsylvania State
University, University Park, Pennsylvania, USA (June 28~30, 2006)
C14 P-type ZnO by Sb-doping for
PN-junction photodetectors (oral)
J.
L. Liu, F. X. Xiu, L. J.
Mandalapu, and Z. Yang
SPIE 2006 Photonics
West, San Jose, California, USA (January 21~26, 2006)
C13 Sb-doped p-type ZnO growth and related
homo-pn-junction (oral) (invited talk)
Z. Yang, F. X. Xiu, L. J. Mandalapu, and J. L. Liu
The 2nd
Chinese ZnO Materials Conference, Nanjing University, Nanjing, China (December
20~23, 2005)
C12 High-quality p-type ZnO films with
solid-source phosphorus-doping by molecular-beam epitaxy (oral)
F.
X. Xiu, Z. Yang, L. J. Mandalapu, D. T.
Zhao, J.
L. Liu, and W. P. Beyermann
MRS 2005
Fall Meeting, Boston, Massachusetts, USA (November 28~December 2, 2005)
C11 UV photodetectors based on
Ga-doped ZnO films (oral)
L.
J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liu
MRS 2005
Fall Meeting, Boston, Massachusetts, USA (November 28~December 2, 2005)
C10 P-type ZnO films by Sb doping in
molecular beam epitaxy (oral)
F.
X. Xiu, Z. Yang, L. J. Mandalapu, D. T.
Zhao, J. L. Liu, and W. P. Beyermann
The 23rd
North American Conference on Molecular Beam Epitaxy (NAMBE), University of
California at Santa Barbara, Santa Barbara, California, USA (September 11~14,
2005)
C9 ZnO based hetero-
and homo-junction photodetectors (poster)
L. J.Mandalapu, F. X. Xiu, Z. Yang, D.
T. Zhao, Y. Zhu, and
J. L. Liu
The 23rd
North American Conference on Molecular Beam Epitaxy (NAMBE), University of
California at Santa Barbara, Santa Barbara, California, USA (September 11~14,
2005)
C8 ZnO growth on Si
with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy (oral)
F.
X. Xiu, Z. Yang, D. T. Zhao, J. L. Liu, K. A. Alim, A. A. Balandin, M. E. Itkis, and
R. C. Haddon
TMS 47th Electronic
Materials Conference (EMC), University
of California at Santa Barbara, Santa Barbara, California, USA
(June 22~24, 2005)
C7 A novel approach to
evaluate the carrier effective mass in GeSi quantum dot structure (poster)
Z.
Yang,
Y. Shi, J. L. Liu, B. Yan, R. Zhang, Y. D. Zheng, and K. L. Wang
IEEE
7th International Conference on Solid-State and Integrated-Circuit
Technology, Beijing, China (October 18~21, 2004)
C6 Structural characteristics of self-assembled Ge/Si
quantum dot superlattices (oral)
B. Yan, Z. Yang,
Y. Shi, J. L. Liu, R. Zhang, Y. D. Zheng, and K. L. Wang
IEEE 13th
International Semiconducting and Insulating Materials Conference, Beijing,
China (September 20~25, 2004)
C5 Properties of
optical and acoustic phonons in self-assembled Ge quantum dot superlattices
(oral)
Z. Yang, Y. Shi, J. L. Liu,
B. Yan, Z. X. Huang, L. Pu, R. Zhang, Y. D. Zheng, and K. L. Wang
The 14th Chinese Semiconductor
Physics Conference, Hong Kong University of Science and Technology, Hong Kong,
China (December 7~10, 2003)
C4 Investigation of the
interdiffusion and roughness at the interface of the Ge/Si quantum dot
superlattices with x-ray reflection method (oral)
B. Yan, Y. Shi, J. L. Liu, Z. Yang, L. Pu, R. Zhang, Y. D.
Zheng, and K. L. Wang
The 14th Chinese Semiconductor
Physics Conference, Hong Kong University of Science and Technology, Hong Kong,
China (December 7~10, 2003)
C3 Fundamentals of
carbon nanotube-based electronics: band structure of carbon nanotubes (oral)
Z.
Yang, Y. Shi, L. Pu, H. G. Yang, B. Yan, J. Tian, J. Xiao, L. Q.
Zhao, J. Lv, J. Z. Chen, K. Huang, R. Zhang, and Y. D. Zheng
The
2002 Chinese Materials Research Conference, Beijing, China (October 21~24,
2002)
C2 Internal field
effect on the photoluminescence spectra of the silicon nanocrystals with quantum
confinement luminescence center model (oral)
K. Huang, S. H. Wang, Y. Shi, G. Y.
Qing, L. Pu, R. Zhang, H. G. Yang, Z.
Yang, J. Tian, J. Xiao, J. Lv, J. Z. Chen, L. Q. Zhao, and Y. D. Zheng
The
2002 Chinese Materials Research Conference, Beijing, China (October 21~24,
2002)
C1 Study of the
writing/erasing/retention time characteristics of Ge/Si hetero-nanocrystal
MOSFET memory (oral)
H. G. Yang, Y. Shi, J. Tian, Z. Yang, R. Zhang, B. Shen, P.
Han, S. L. Gu, and Y. D. Zheng
The 13th Chinese Semiconductor
Physics Conference, Soochow University, Suzhou, Jiangsu, China (October 26~29,
2001)
(Note:
Names of the presenters for oral presentations were shown in italic.)