Research/Course
Page of Prof. Sid Ghosh
Department of
Electrical and Computer Engineering
Office
Address: Lab
Address:
3015 ERF 3016
ERF
842
Phone: 312 -996-5256
Phone: 312-996-4184
Fax: 312-996-6465
Email: sghosh@ece.uic.edu
MBE Lab:
109B SES
Research Resources Center – East
Phone: 312-412-9580
Research
Interest: Currently my group is
involved in several projects in photonics and spintronics/magnetics along with
a highly focused effort on oxide Molecular Beam Epitaxy (MBE) system for
epitaxial growth of multi-ferroic oxides on semiconductor substrates. Main
research areas are:
1)
Noise
Measurements: We measure
low-frequency (1/f) noise in various electronic and photonics devices for
understanding fundamental processes giving rise to low-frequency flicker noise
in these devices. Noise is an important parameter for sensors and detectors. It
is also an important diagnostic tool for measuring reliability of electronic
and photonic devices. Our focus is to develop accurate measurement techniques
and models to understand low frequency noise in electronic and optoelectronic
devices.
2)
Fabrication of
High Performance HOT HgCdTe Avalanche Photodiodes (APD): MWIR APDs are being designed, MBE grown ,
fabricated, and characterized in collaboration with EPIR Technologies, Inc. The
aim is to develop MWIR thermoelectrically cooled HgCdTe APDs on Silicon
substrates. We are currently in the phase II of a STTR grant from Air Force
Office of Scientific Research. Our group is developing novel fabrication
techniques to enhance the performance of hetero-integrated APDs and we have set
up a state of the art noise, gain and excess noise measurement system for UV
and IR APDs. We are developing a heterodyned fiber laser for high frequency IR
APD measurement.
3)
Multifunctional
Conducting Oxides for Space Applications: The objective of this research effort is to develop affordable,
reliable and reproducible technique to deposit large are, uniform ZnO-based
transparent conductive oxide film with high transmissivity in visible band to
offer a discharge channel. We are currently in Phase II of this STTR program
from NASA.
4)
MBE Growth of
Multiferroic Oxides: Multiferroic
oxide thin films are being grown on semiconductor substrates. The aim is to
integrate the oxide thin films with the semiconductor substrates and be able to
make them interact for advanced microwave applications. Our group is developing novel in situ
real time surface characterization techniques for feedback control of surface
stoichiometry during epitaxial growth.
UIC Molecular
Beam Epitaxy Lab: The RF Plasma
assisted MBE system is located in the
Education and
Outreach: Our group actively participates in the NSF funded REU and
RET sites at the
Courses : Fall
2004 – ECE/PHY 540 – Physics of Semiconductor Devices
Spring 2005 –
ECE 448 – Transistors
Fall 2005 – ECE
225 – Circuit Analysis
Spring 2006 – ECE 448 – Transistors
Spring 2006 – ECE 542 – Advanced Semiconductor Devices
Fall 2006 – ECE 448 – Transistors
Spring 2007 – ECE 491 – Nanotechnology:Past, Present and
Future
Fall 2007 – ECE
347 – Integrated Circuit Engineering
Spring 2008 – ECE – 448
– Transistors