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Description: Credit 4U/5G. ECE 442 is a
relevant course and is a supplement for the courses ECE 445 and ECE 545 and
deals with the physics of devices encountered in the
power-electronic and switching converter systems.
Prerequisite: ECE 342 and ECE 346
Textbooks:
1. B.J. Baliga, Power Semiconductor Devices, PWS Publishing Co.,
latest edition. (TEXTBOOK)
2. V. Benda,
J. Gowar, and D.A. Grant, Power Semiconductor
Devices: Theory and Applications, John Wiley and Sons, 1999.
3. S.M. Sze,
Modern Semiconductor Device Physics, John Wiley and Sons.
4. Erickson, R.W. and Maksimovic, D., 2001, Fundamentals of Power Electronics, Kluwer Academic Publishers.
5. B.J. Baglia,
Modern Power Devices, Krieger, 1992.
Topics:
1. Basic
power converters
a. Hard-
vs. soft-switching converters
b. Circuit vs. device
parametric tradeoff
2.
Semiconductor fundamentals and transport physics
a. Band
structure and charge carriers in semiconductor
b. Drift and diffusion -
mobility, diffusion constant and continuity
equation
c. Resistivity
d. Excess carriers in
semiconductor and lifetime
e. Special topics important
to power devices - high level injection
and surface scattering
effects
3.
Breakdown mechanisms
a. Basic
p-n junction physics
b. Breakdown physics
c. Edge termination
techniques
4. Power
rectifier
a. Schottky barrier and P-i-N rectifiers:comparative discussion
b. Forward conduction and
reverse recovery mechanism
c. Modern device structures:JBS and MPS rectifiers
d. Circuit modeling
5. Power
BJT and thyristor
a. Basic
device operation and physics
b. Static-blocking
characteristics
c. Dynamic switching
characteristics
d. Second breakdown
phenomenon
e. Introduction to thyristor structure and concept - blocking and
switching chracteristics
6. Power
MOSFET
a. Basic
MOS structure and physics - threshold voltage, channel
and on resistance, parasitic
BJT
b. Static blocking
characteristics
c. Dynamic-switching
characteristics and frequency response -
inter-electrode capacitances
d. Short overview of
modern device structures
e. Circuit modeling
7.
Insulated gate bipolar transistor (IGBT)
a. Basic
device structure and operating mechanism
b. Static blocking
characteristics
c. Dynamic switching
characteristics
d. Parasitic thyristor latch-up and safe operating area
e. Circuit modeling
8.
Emerging high-power devices
a.
Photoconductive switches
b. MOS-controlled thyristors
c. Emitter-switched thyristors
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